MT36HTS51272FY-667A3D3 Micron Technology Inc, MT36HTS51272FY-667A3D3 Datasheet - Page 31

• Manufacturer Part Number: MT36HTS51272FY-667A3D3
• Description: MODULE DDR2 4GB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS51272FY-667A3D3

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 667MT/s
• Package / Case: 240-FBDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 512Mx72
• Total Density: 4GByte
• Chip Density: 1Gb
• Package Type: FBDIMM
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16:
Table 17:
PDF: 09005aef822148b0/source: 09005aef82214898
HTS36C512x72F_2.fm - Rev. A 4/06 EN
Parameter/Condition
Supply voltage
Input high voltage: logic 1; all inputs
Input low voltage: logic 0; all inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current:
Power supply current, READ: SCL clock frequency = 100 KHz
Power supply current, WRITE: SCL clock frequency = 100 KHz
Parameter/Condition
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
Notes:
OUT
IN
= 3mA
OUT
= GND to V
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
= GND to V
the falling or rising edge of SDA.
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tor, and the EEPROM does not respond to its slave address.
DD
SS
SS
DD
; V
; V
DDSPD
DDSPD
= +1.7V to +3.6V
= +1.7V to +3.6V
240-Pin 4GB DDR2 SDRAM FBDIMM (DR, FB, x72)
31
Symbol
Symbol
t
V
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STO
SU:STA
t
t
t
DDSPD
I
t
V
I
V
t
HIGH
WRC) is the time from a valid stop condition of a write
CC
LOW
f
WRC
V
I
I
CC
t
t
BUF
I
LO
SCL
SB
AA
DH
OL
LI
t
IH
t
t
IL
F
R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
W
I
R
V
DDSPD
Min
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
–
0
–
–
–
–
Min
–0.6
0.10
0.05
1.7
1.6
0.4
2
–
× 0.7
Serial Presence-Detect
Max
300
400
0.9
0.3
50
10
–
–
–
–
–
–
–
–
©2006 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
3.6
0.4
3
3
4
1
3
Units
+ 0.5
× 0.3
KHz
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
Preliminary
Notes
Units
mA
mA
µA
µA
µA
V
V
V
V
1
2
2
3
4