MT4HTF3264AY-53ED3 Micron Technology Inc, MT4HTF3264AY-53ED3 Datasheet - Page 5

• Manufacturer Part Number: MT4HTF3264AY-53ED3
• Description: MODULE DDR2 256MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF3264AY-53ED3

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7: Pin Descriptions (Continued)
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
V
Err_Out#
Symbol
RDQS#x
RDQSx,
DD
V
SDA
V
DDSPD
RFU
V
NU
NC
NF
/V
REF
SS
DDQ
(open drain)
Output
Output
Supply
Supply
Supply
Supply
Type
I/O
–
–
–
–
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component V
ule V
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: V
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
2
DD
C bus.
.
DD
5
/2.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
and V
DDQ
are connected to the mod-
© 2003 Micron Technology, Inc. All rights reserved.
Pin Descriptions