MT16HTF12864HY-667D3 Micron Technology Inc, MT16HTF12864HY-667D3 Datasheet - Page 14

MODULE DDR2 1GB 200SODIMM

MT16HTF12864HY-667D3

Manufacturer Part Number
MT16HTF12864HY-667D3
Description
MODULE DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTF12864HY-667D3

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
667MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 14:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
128–255 Reserved for customer use
99–127 Manufacturer-specific data (RSVD)
65–71
73–90
95–98
Byte
63
64
72
91
92
93
94
Checksum for bytes 0–62
Manufacturer’s JEDEC ID code
Manufacturer’s JEDEC ID code
Manufacturing location
Module part number (ASCII)
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Module serial number
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 14
Notes:
Description
1. The
device specification is
t
RC SPD values shown are based on the JEDEC standard values. The actual Micron
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
t
RC = 55ns.
14
Entry (Version)
(Continued)
MICRON
01–12
-80E
-800
-667
-53E
-40E
1–9
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT16HTF12864H(I) MT16HTF25664H(I)
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01–09
2C
92
33
4E
F9
60
00
00
FF
FF
Serial Presence-Detect
©2004 Micron Technology, Inc. All rights reserved.
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01–09
D4
9A
2C
33
EF
01
FF
00
00
FF

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