MT9HTF6472FY-667D4E3 Micron Technology Inc, MT9HTF6472FY-667D4E3 Datasheet - Page 9

MODULE DDR2 512MB 240-DIMM

MT9HTF6472FY-667D4E3

Manufacturer Part Number
MT9HTF6472FY-667D4E3
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9HTF6472FY-667D4E3

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
667MT/s
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I
Table 10:
PDF: 09005aef81a2f1eb/Source: 09005aef81a2f20c
HTF9C64_128x72F.fm - Rev. B 9/07 EN
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
_Idle_0
_Idle_1
_Active_1
_Active_2
_Training
_IBIST
_EI
Conditions and Specifications
I
DD
Conditions
Notes:
1. Actual test conditions may vary from published JEDEC test conditions.
Condition
Idle current, single or last DIMM: L0 state; Idle (0 percent bandwidth); Primary channel
enabled; Secondary channel disabled; CKE HIGH; Command and address lines stable; DDR2
SDRAM clock active
Idle current, first DIMM: L0 state; Idle (0 percent bandwidth); Primary and secondary
channels enabled; CKE HIGH; Command and address lines stable; DDR2 SDRAM clock active
Active power: L0 state; 50 percent DRAM bandwidth; 67 percent READ; 33 percent WRITE;
Primary and secondary channels enabled; DDR2 SDRAM clock active; CKE HIGH
Active power, data pass through: L0 state; 50 percent DRAM bandwidth to downstream
DIMM; 67 percent READ; 33 percent WRITE; Primary and secondary channels enabled; DDR2
SDRAM clock active; CKE HIGH; Command and address lines stable
Training: Primary and secondary channels enabled; 100 percent toggle on all channel lanes;
DRAMs idle; 0 percent bandwidth; CKE HIGH; Command and address lines stable; DDR2
SDRAM clock active
IBIST over all IBIST modes: DRAM idle (0 percent bandwidth); Primary channel enabled;
Secondary channel enabled; CKE HIGH; Command and address lines stable; DDR2 SDRAM
clock active
Electrical idle: DRAM idle (0 percent bandwidth); Primary channel disabled; Secondary
channel disabled; CKE LOW; Command and address lines floated; DDR2 SDRAM clock active;
ODT and CKE driven LOW
512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
DD
Conditions and Specifications
©2005 Micron Technology, Inc. All rights reserved.

Related parts for MT9HTF6472FY-667D4E3