MT18HVF12872PY-667D1 Micron Technology Inc, MT18HVF12872PY-667D1 Datasheet

Page 1

DDR2 VLP Registered DIMM (RDIMM) MT18HVF12872(P) – 1GB For component data sheets, refer to Micron's Web site: Features • Fits with ATCA form factor • 240-pin, very low profile registered dual in-line memory module (VLP RDIMM) • Fast data transfer ...

Page 2

... Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters 1GB Modules Base Device: MT47H128M4 2 Part Number MT18HVF12872(P)Y-667__ MT18HVF12872(P)Y-53E__ MT18HVF12872(P)Y-40E__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 240-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 ...

Page 4

Table 5: Pin Description Symbol Type ODT0 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to (SSTL_18) the DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS, DQS#, and CB. The ODT input ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram V SS RS0# U16 S0# RS0#: DDR2 SDRAM R BA0–BA1 RBA0–RBA1: DDR2 SDRAM E A0–A13 RA0–RA13: DDR2 SDRAM G RAS# RRAS#: DDR2 SDRAM I CAS# RCAS#: DDR2 SDRAM S WE# RWE#: DDR2 ...

Page 6

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 7

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’ ...

Page 8

I Specifications DD Table 8: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H128M4 DDR2 SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one bank ...

Page 9

Register and PLL Specifications Table 9: Register Specifications SSTU32865 devices or equivalent JESD82-19 Parameter Symbol high-level IH DC input voltage DC low-level input voltage high-level IH AC ...

Page 10

Table 10: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol V DC high-level input voltage DC low-level input voltage V Input voltage (limits high-level input voltage low-level input voltage V Input differential-pair cross voltage ...

Page 11

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 12

Table 14: Serial Presence-Detect Matrix Byte 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on SDRAM 4 Number of column addresses on SDRAM ...

Page 13

Table 14: Serial Presence-Detect Matrix (continued) Byte 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time Write recovery time WRITE-to-READ command delay, 38 READ-to-PRECHARGE command delay, 39 ...

Page 14

Module Dimensions Figure 3: 240-Pin DDR2 DIMM 2.0 (0.079) R (4X 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 1.0 (0.039) 1.0 (0.039) TYP TYP U12 U13 U14 3.05 (0.012) TYP PIN 240 2.20 (0.087) TYP ...