MT16HTF25664AY-667E1 Micron Technology Inc, MT16HTF25664AY-667E1 Datasheet - Page 15

MODULE DDR2 2GB 240-UDIMM

MT16HTF25664AY-667E1

Manufacturer Part Number
MT16HTF25664AY-667E1
Description
MODULE DDR2 2GB 240-UDIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTF25664AY-667E1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Package / Case
240-UDIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1347
Table 12: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Notes:
DD
Specifications and Conditions – 1GB (Continued)
),
t
RRD =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
in I
RRD (I
DD
DD2P
), AL =
DD
(CKE LOW) mode.
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
15
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
2456
-800
1976
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
1856
-53E
Specifications
-40E
1816
Units
mA

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