MT8HTF12864HDY-667E1 Micron Technology Inc, MT8HTF12864HDY-667E1 Datasheet - Page 10
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MT8HTF12864HDY-667E1
Manufacturer Part Number
MT8HTF12864HDY-667E1
Description
MODULE DDR2 1GB 200-SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF6464HDY-53EB3.pdf
(19 pages)
Specifications of MT8HTF12864HDY-667E1
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
1Gb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
908mA
Number Of Elements
8
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1353
DRAM Operating Conditions
Table 9: Module and Component Speed Grades
DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Design Considerations
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Module Speed Grade
-1GA
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron's Web site. Module speed grades cor-
relate with component speed grades.
-80E
-800
-667
-53E
-40E
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Component Speed Grade
DRAM Operating Conditions
-187E
-25E
-37E
-25
-5E
-3
© 2006 Micron Technology, Inc. All rights reserved.