MT16JTF25664AY-1G4D1 Micron Technology Inc, MT16JTF25664AY-1G4D1 Datasheet - Page 7

• Manufacturer Part Number: MT16JTF25664AY-1G4D1
• Description: MODULE DDR3 SDRAM 2GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16JTF25664AY-1G4D1

• Memory Type: DDR3 SDRAM
• Memory Size: 2GB
• Speed: 1333MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
Table 8:
Input Capacitance
Component AC Timing and Operating Conditions
PDF: 09005aef82b22503/Source: 09005aef82b224f4
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
V
Symbol
Symbol
IN
V
I
VREF
T
T
, V
I
V
I
DD 1
OZ
I
VTT
A
C
TT 1
I
2,4
2,4
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Absolute Maximum Ratings
Operating Conditions
Parameter
Termination reference current from V
Termination reference voltage – command address bus
Module ambient operating temperature
DDR3 SDRAM component case operating
temperature
DD
REF
REF
supply voltage relative to V
input 0V ≤ V
leakage current; V
Notes:
Notes:
3
Stresses greater than those listed in Table 7, may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
1. V
1. V
2. T
3. Refresh rate is required to double when 85°C < T
4. For further information, refer to technical note
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations.
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 9.
IN
or less than 300mV.
address signals' voltage margin and will reduce timing margins.
on Micron’s Web site.
≤ 0.95V (All other pins not under
A
REF
TT
and T
termination voltage in excess of stated limit will adversely affect the command and
must not be greater than 0.6 x V
REF
= valid V
C
are simultaneous requirements.
OUT
SS
SS
≤ V
REF
DD
level
TT
IN
Q; DQs and
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
≤ V
DD
Commercial
Industrial
Commercial
Industrial
7
;
Address inputs
RAS#, CAS#, WE#,
S#, CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
. When V
TN-00-08: Thermal
DD
C
–0.483 x V
≤ 95°C.
is less than 500mV, V
–600
Min
–40
–40
0
0
Electrical Specifications
DD
©2007 Micron Technology, Inc. All rights reserved.
Min
–0.4
–0.4
–16
–32
–8
–2
–2
+0.517 x V
Applications, available
Max
+600
+70
+85
+85
+95
REF
may be equal to
+1.975
+1.975
Max
+16
+32
DD
+8
+2
+2
Units
Units
mA
°C
°C
°C
°C
V
µA
µA
µA
V
V