MT16HTF25664AY-1GAE1 Micron Technology Inc, MT16HTF25664AY-1GAE1 Datasheet - Page 21

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MT16HTF25664AY-1GAE1

Manufacturer Part Number
MT16HTF25664AY-1GAE1
Description
MODULE DDR2 2GB 240-UDIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTF25664AY-1GAE1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
1066MT/s
Package / Case
240-UDIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Chip Density
1Gb
Access Time (max)
35ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.736A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 15: DDR2 I
Values shown for MT47H256M8 DDR2 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
PDF: 09005aef80f09084
htf16c64_128_256x64ay.pdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
t
HIGH between valid commands; Address bus inputs are stable during dese-
lects; Data bus inputs are switching
CK (I
DD
OUT
),
t
RC =
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
Notes:
),
Specifications and Conditions – 4GB (Continued)
t
RRD =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
RRD (I
in I
DD
DD2P
), AL =
DD
),
(CKE LOW) mode.
512MB, 1GB, 2GB, 4GB (x64, DR) 240-Pin DDR2 UDIMM
t
RCD =
t
RCD (I
t
RCD (I
DD
) - 1 ×
DD
); CKE is HIGH, S# is
21
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
2776
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
-53E
2416
Units
mA

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