MT18HVS51272PKY-667A1 Micron Technology Inc, MT18HVS51272PKY-667A1 Datasheet

no-image

MT18HVS51272PKY-667A1

Manufacturer Part Number
MT18HVS51272PKY-667A1
Description
MODULE DDR2 4GB 244-MDIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18HVS51272PKY-667A1

Memory Type
DDR2 SDRAM
Memory Size
4GB
Speed
667MT/s
Package / Case
244-MDIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM VLP Mini-RDIMM
MT18HVS25672(P)K – 2GB
MT18HVS51272(P)K – 4GB
For component data sheets, refer to Micron’s Web site:
Features
• 244-pin, very low profile mini registered dual in-line
• Fast data transfer rates: PC2-4200, PC2-5300,
• 2GB (256 Meg x 8), 4GB (512 Meg x 8)
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Supports redundant output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL) 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank, TwinDie
Table 1:
PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea
HVS18C256_512x72PK.fm - Rev. A 8/07 EN
memory module (VLP Mini-RDIMM)
or PC2-6400
operation
DD
DDSPD
Speed
Grade
-80E
-667
-53E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Industry Nomenclature
TM
PC2-6400
PC2-5300
PC2-4200
(2COB) DRAM devices
t
CK
CL = 5
800
667
Data Rate (MT/s)
2GB, 4GB (x72, DR) 244-Pin DDR2 VLP Mini-RDIMM
www.micron.com
CL = 4
533
533
533
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Parity
• Operating temperature
• Package
• Frequency/CAS latency
PCB height: 18.2mm (0.72in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 244-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
CL = 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
400
400
2. CL = CAS (READ) latency; registered mode
3. Not available in 4GB module density.
module offerings.
will add one clock cycle to CL.
244-Pin VLP Mini-RDIMM
t
(ns)
12.5
RCD
15
15
A
A
1
2
≤ +85°C)
≤ +70°C)
©2007 Micron Technology, Inc. All rights reserved.
3
(ns)
12.5
t
15
15
RP
Marking
Features
None
-80E
-53E
-667
P
Y
I
(ns)
t
55
55
55
RC

Related parts for MT18HVS51272PKY-667A1

MT18HVS51272PKY-667A1 Summary of contents

Page 1

DDR2 SDRAM VLP Mini-RDIMM MT18HVS25672(P)K – 2GB MT18HVS51272(P)K – 4GB For component data sheets, refer to Micron’s Web site: Features • 244-pin, very low profile mini registered dual in-line memory module (VLP Mini-RDIMM) • Fast data transfer rates: PC2-4200, PC2-5300, ...

Page 2

... Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18HVS51272PKY-53EA1. PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea HVS18C256_512x72PK.fm - Rev. A 8/07 EN ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 244-Pin VLP Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 ...

Page 4

Figure 2: . Pin Descriptions Symbol Type A0–A15 Input (SSTL_18) BA0–BA2 Input (SSTL_18) CK0, CK0# Input (SSTL_18) CKE0, CKE1# Input (SSTL_18) ODT0, ODT1 Input (SSTL_18 Input AR N (SSTL_18) RAS#, CAS#, WE# Input (SSTL_18) RESET# Input (LVCMOS) S0#, ...

Page 5

Figure 2: Pin Descriptions (continued) Symbol Type Supply Supply DDSPD V Supply REF V Supply SS NC – NF – PDF: 09005aef8281e0a3/Source: 09005aef8281d7ea HVS18C256_512x72PK.fm - Rev. A 8/07 EN 2GB, 4GB (x72, DR) 244-Pin ...

Page 6

Functional Block Diagram Figure 3: Functional Block Diagram RS1# RS0# DQS0 DQS0# DM0/RDQS9 NF/DQS9# DM/ RDQS DQ DQ0 DQ1 DQ DQ DQ2 DQ DQ3 DQ4 DQ DQ DQ5 DQ DQ6 DQ7 DQ DQS1 DQS1# DM1/RDQS10 NF/DQS10# DM/ RDQS DQ8 DQ ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Specifications Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’ ...

Page 9

I Specifications DD Table 8: I Specifications and Conditions – 2GB DD Values are shown for the MT47H256M8THN DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256 Meg x 8) component data sheet Parameter/Condition Operating ...

Page 10

Table 9: I Specifications and Conditions – 4GB DD Values are shown for the MT47H512M8THM DDR2 SDRAM only and are computed from values specified in the 4Gb TwinDie (512 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge ...

Page 11

Register and PLL Specifications Table 10: Register Specifications SSTU32865 device or equivalent JESD82-19 Parameter Symbol DC high-level input voltage DC low-level input voltage high-level IH AC ...

Page 12

Table 11: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input voltage V DC low-level input voltage V V Input voltage (limits high-level input voltage DC low-level input voltage V Input differential-pair cross V voltage ...

Page 13

Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

Table 15: Serial Presence-Detect Matrix Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of column addresses on ...

Page 15

Table 15: Serial Presence-Detect Matrix (continued) Byte Description 31 Module rank density 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time Write recovery ...

Page 16

Module Dimensions Figure 4: 244-Pin DDR2 VLP Mini-RDIMM 1.0 (0.039 1.8 (0.071 6.0 (0.236) TYP 1.0 (0.039) 0.60 (0.024) TYP Pin 1 TYP 2.0 (0.079) TYP 42.9 (1.689) TYP U8 U9 3.3 (0.13) TYP ...

Related keywords