TSAL6100 Vishay, TSAL6100 Datasheet - Page 2
TSAL6100
Manufacturer Part Number
TSAL6100
Description
EMITTER IR 5MM HI EFF 940NM
Manufacturer
Vishay
Specifications of TSAL6100
Rise Time
800 ns
Radiant Intensity
130 mW/sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
80mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 10
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1203
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TSAL6100
Manufacturer:
RENESAS
Quantity:
101
Part Number:
TSAL6100
Manufacturer:
VISHAY/威世
Quantity:
20 000
TSAL6100
Vishay Semiconductors
Electrical Characteristics
T
Optical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Temp. coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temp. coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temp. coefficient of λ
Rise time
Fall time
Virtual source diameter
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Power Dissipation vs. Ambient Temperature
94 7957
Parameter
Parameter
250
200
150
100
50
0
0
e
p
F
T
20
amb
- Ambient Temperature (°C)
40
I
I
I
V
V
I
I
I
I
I
I
I
I
I
method: 63 %; encircled energy
F
F
F
F
F
F
F
F
F
F
F
F
R
R
= 100 mA, t
= 1 A, t
= 100 mA
= 100 mA, t
= 1.0 A, t
= 100 mA, t
= 20 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 5 V
= 0 V, f = 1 MHz, E = 0
60
R
Test condition
Test condition
p
thJA
= 100 µs
p
80
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
100
Symbol
Symbol
TK
TKφ
TKλ
Δλ
V
V
C
φ
λ
I
∅
I
I
ϕ
t
t
R
e
e
e
p
r
f
F
F
VF
j
e
p
Figure 2. Forward Current vs. Ambient Temperature
96 11986
250
200
150
100
50
0
Min
Min
650
0
80
T
2 0
amb
- Ambient Temperature (°C)
1000
1.35
- 1.3
- 0.6
± 10
Typ.
Typ.
130
940
800
800
2.6
0.2
3.7
25
35
50
4 0
R
6 0
thJA
Document Number 81009
Max
Max
400
1.6
10
3
Rev. 1.4, 28-Nov-06
8 0
100
mW/sr
mW/sr
mV/K
nm/K
%/K
Unit
Unit
mW
deg
mm
nm
nm
µA
pF
ns
ns
V
V