TSAL6400 Vishay, TSAL6400 Datasheet - Page 3

EMITTER IR 5MM HI EFF 950NM

TSAL6400

Manufacturer Part Number
TSAL6400
Description
EMITTER IR 5MM HI EFF 950NM
Manufacturer
Vishay
Datasheet

Specifications of TSAL6400

Rise Time
800 ns
Radiant Intensity
40 mW/sr
Viewing Angle
50°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
25mW/sr @ 100mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.35V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Beam Angle
+/- 25
Maximum Forward Current
100 mA
Maximum Power Dissipation
210 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Fall Time
800 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Lens Shape
Circular
Mounting Style
Through Hole
Operating Voltage
1.6 V
Peak Wavelength
940nm
Forward Current If(av)
100mA
Fall Time Tf
800ns
Supply Voltage Range
1.35V To 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1205

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSAL6400
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
TSAL6400
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TSAL6400
Quantity:
40 000
Company:
Part Number:
TSAL6400
Quantity:
2 625
BASIC CHARACTERISTICS
T
Document Number: 81011
Rev. 1.8, 29-Jun-09
amb
= 25 °C, unless otherwise specified
96 11987
96 12154
Fig. 3 - Pulse Forward Current vs. Pulse Duration
13600
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
1000
10
10
10
10
10
10
10
10
100
0.1
10
0
4
3
2
1
1
1
0
-1
10
10
0
-2
0.1
1.0
0
0.5
0.05
V
F
10
10
- Forward Voltage (V)
1
I
t
F
p
t
-1
1
p
/T = 0.01
- Forward Current (mA)
- Pulse Duration (ms)
I
FSM
= 1 A (Single Pulse)
10
10
2
0
2
t
t
For technical questions, contact:
P
P
/T = 0.001
= 100 µs
High Power Infrared Emitting Diode,
10
10
3
1
3
940 nm, GaAlAs/GaAs
10
10
4
2
4
emittertechsupport@vishay.com
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
13602
14291
94 7993
Fig. 8 - Relative Radiant Power vs. Wavelength
1000
1.25
0.75
0.25
100
1.0
0.5
0.1
1.6
1.2
0.8
0.4
Fig. 6 - Radiant Power vs. Forward Current
10
- 10
1
0
0
10
890
0
0
T
10
amb
I
F
10
- Ambient Temperature (°C)
- Forward Current (mA)
1
λ
Vishay Semiconductors
- Wavelength (nm)
I
F
50
= 100 mA
940
10
I
F
2
= 20 mA
100
10
3
TSAL6400
www.vishay.com
10
990
140
4
3

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