LN55 Panasonic - SSG, LN55 Datasheet
LN55
Manufacturer Part Number
LN55
Description
IR LED 950NM 35 DEG SIDE VIEW
Manufacturer
Panasonic - SSG
Datasheet
1.LN55.pdf
(3 pages)
Specifications of LN55
Current - Dc Forward (if)
50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
70°
Orientation
Side View
Mounting Type
Through Hole
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LN55
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PANASONI
Quantity:
40 000
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Part Number:
LN550P-03
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PHILIPS
Quantity:
1 600
Part Number:
LN550P-03
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LUNGE
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20 000
Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
For optical control systems
*
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
High-power output, high-efficiency : P
Suited for use with silicon photodetectors
Infrared light emission close to monochromatic light :
High-speed modulation capability
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
60
50
40
30
20
10
0
– 25
Ambient temperature Ta (˚C )
Parameter
Parameter
0
20
I
F
— Ta
40
60
80
Symbol
Symbol
100
I
T
T
V
V
P
P
FP
I
C
I
opr
stg
R
F
D
O
P
R
F
t
*
O
10
10
10
10
= 3.5 mW (typ.)
10
–30 to +100
–1
–2
–3
–25 to +85
1
10
2
I
I
I
I
V
V
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
–2
R
R
= 50mA
= 50mA
= 50mA
= 50mA
75
50
= 3V
= 0V, f = 1MHz
1
3
I
FP
10
–1
— Duty cycle
Duty cycle (%)
Conditions
P
Unit
mW
= 950 nm (typ.)
mA
1
˚C
˚C
A
V
Ta = 25˚C
10
10
2
ø3.5 0.2
min
1.8
R1.75
80
70
60
50
40
30
20
10
0
0
4.5 0.3
1
2.54
950
typ
3.5
Forward voltage V
50
50
35
2
0.4
2-0.98 0.2
2-0.45 0.15
I
F
— V
max
1.5
0.8
10
0.45 0.15
F
Ta = 25˚C
2.3
4.2 0.3
F
1.2
Unit : mm
1: Cathode
2: Anode
1.2
(V)
Unit
mW
deg.
nm
nm
pF
V
1.9
A
1.6
1
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LN55 Summary of contents
Page 1
... Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : P Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : High-speed modulation capability Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Power dissipation ...
Page 2
... Pulse forward current I FP — 1000 I F 980 960 940 920 900 120 – Ambient temperature Ta (˚C ) Frequency characteristics 20˚ 25˚C 30˚ 10 40˚ 1 50˚ 60˚ 70˚ –1 10 80˚ 90˚ – Frequency f (kHz) LN55 4 10 (mA) = 50mA 80 120 3 10 ...
Page 3
Caution for Safety DANGER Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any ...