TSFF5210 Vishay, TSFF5210 Datasheet - Page 2
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TSFF5210
Manufacturer Part Number
TSFF5210
Description
EMITTER IR 5MM HI EFF 870NM
Manufacturer
Vishay
Specifications of TSFF5210
Radiant Intensity
1800 mW or sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
90mW/sr @ 100mA
Wavelength
870nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Peak Wavelength
870nm
Forward Current If(av)
100mA
Rise Time
15ns
Fall Time Tf
15ns
Supply Voltage Range
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1207
TSFF5210
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21142
200
180
160
140
120
100
80
60
40
20
0
0
10 20
T
amb
R
thJA
- Ambient Temperature (°C)
30 40 50 60 70 80 90 100
= 230 K/W
e
p
F
For technical questions, contact:
I
High Speed Infrared Emitting Diode,
DC
V
I
I
I
R
F
F
F
870 nm, GaAlAs Double Hetero
= 70 mA, I
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
F
I
V
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
R
= 1 mA
= 5 V
p
p
AC
= 100 µs
= 100 µs
p
p
p
= 30 mA pp
= 20 ms
= 20 ms
= 20 ms
emittertechsupport@vishay.com
SYMBOL
TK
TKφ
TKλ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
f
t
t
d
R
e
e
r
c
e
p
f
F
F
VF
j
e
p
21143
120
100
80
60
40
20
0
0
MIN.
120
10
T
amb
20 30 40
R
thJA
- Ambient Temperature (°C)
= 230 K/W
- 0.35
TYP.
1800
- 1.8
± 10
0.25
125
180
870
1.5
2.3
3.7
50
40
15
15
24
50 60 70 80
Document Number: 81090
MAX.
360
1.8
3.0
10
Rev. 1.7, 29-Jun-09
90 100
mW/sr
mW/sr
mV/K
UNIT
nm/K
MHz
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V