TSHG6400 Vishay, TSHG6400 Datasheet

EMITTER IR 5MM HI SPEED 850NM

TSHG6400

Manufacturer Part Number
TSHG6400
Description
EMITTER IR 5MM HI SPEED 850NM
Manufacturer
Vishay
Datasheets

Specifications of TSHG6400

Radiant Intensity
700 mW/sr
Viewing Angle
44°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
40mW/sr @ 100mA
Wavelength
850nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Peak Wavelength
850nm
Forward Current If(av)
100mA
Rise Time
20ns
Fall Time Tf
13ns
Supply Voltage Range
1.5V
Operating Temperature Range
-40°C To
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1213

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TSHG6400
Quantity:
750
Company:
Part Number:
TSHG6400
Quantity:
70 000
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
DESCRIPTION
TSHG6400 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
Note
Test conditions see table “Basic Characteristics“
Note
MOQ: minimum order quantity
Note
T
Document Number: 84636
Rev. 1.1, 29-Jun-09
amb
PRODUCT SUMMARY
COMPONENT
TSHG6400
ORDERING INFORMATION
ORDERING CODE
TSHG6400
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
I
e
For technical questions, contact:
(mW/sr)
70
J-STD-051, leads 7 mm soldered
PACKAGING
t ≤ 5 s, 2 mm from case
94 8389
t
p
TEST CONDITION
/T = 0.5, t
Bulk
t
p
on PCB
= 100 µs
p
= 100 µs
ϕ (deg)
± 22
emittertechsupport@vishay.com
MOQ: 4000 pcs, 4000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λ
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
• Good spectral matching with CMOS cameras
• Compliant to RoHS directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared radiation source for operation with CMOS
• High speed IR data transmission.
accordance to WEEE 2002/96/EC
cameras (illumination).
SYMBOL
REMARKS
R
T
I
T
T
I
FSM
V
P
amb
I
FM
T
thJA
stg
F
sd
R
V
j
λ
P
850
(nm)
p
Vishay Semiconductors
= 850 nm
- 40 to + 100
- 40 to + 85
VALUE
100
200
180
100
260
230
5
1
c
= 18 MHz
PACKAGE FORM
TSHG6400
T-1¾
t
r
www.vishay.com
20
(ns)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
A
1

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TSHG6400 Summary of contents

Page 1

... High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero DESCRIPTION TSHG6400 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSHG6400 70 Note Test conditions see table “Basic Characteristics“ ...

Page 2

... TSHG6400 Vishay Semiconductors 200 180 160 140 120 R = 230 K/W thJA 100 100 T - Ambient Temperature (°C) 21142 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...

Page 3

... GaAlAs Double Hetero T < 50 °C amb 0.05 0.1 0.2 0.5 10 100 16971 3 4 16972 1000 94 8883 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com TSHG6400 Vishay Semiconductors 1000 100 100 1000 I - Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.25 1.0 0.75 ...

Page 4

... TSHG6400 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A 0.5 + 0.15 - 0.05 Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero C + 0.2 0.6 - 0.1 2.54 nom. emittertechsupport@vishay.com R 2.49 (sphere) Area not plane Ø 5 ± 0.15 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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