LN175 Panasonic - SSG, LN175 Datasheet
LN175
Manufacturer Part Number
LN175
Description
INFRARED LIGHT EMITTING DIODE
Manufacturer
Panasonic - SSG
Datasheet
1.LN175.pdf
(2 pages)
Specifications of LN175
Current - Dc Forward (if)
100mA
Wavelength
900nm
Voltage - Forward (vf) Typ
1.4V
Viewing Angle
240°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-
Other names
LN175PA
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LN175
Manufacturer:
PANASONI
Quantity:
40 000
Infrared Light Emitting Diodes
LN175
GaAlAs Infrared Light Emitting Diode
For optical control systems
*
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Response time
Half-power angle
High-power output, high-efficiency : P
Emitted light spectrum suited for silicon photodetectors :
Good radiant power output linearity with respect to input current
Wide directivity : = 120 deg. (typ.)
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
P
= 900 nm (typ.)
Parameter
Parameter
Symbol
Symbol
I
T
t
T
V
V
P
P
r
FP
I
C
I
, t
opr
stg
R
F
D
O
P
R
F
t
*
f
O
= 12 mW (typ.)
– 40 to +100
–25 to +85
I
I
I
I
V
V
I
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
F
R
R
= 100mA
= 100mA
= 100mA
= 100mA
= 100mA
170
100
= 3V
= 0V, f = 1MHz
2
3
Conditions
Unit
mW
mA
˚C
˚C
A
V
min
7
1
4.5 0.15
3.5 0.15
2.54
900
700
120
typ
1.4
2
12
70
50
2-1.2 0.3
2-0.45 0.15
max
1.7
10
1.6 0.15
0.45 0.15
0.8 0.1
Unit : mm
2.1 0.15
1: Cathode
2: Anode
Unit
mW
deg.
nm
nm
pF
ns
V
A
1
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LN175 Summary of contents
Page 1
... Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : P Emitted light spectrum suited for silicon photodetectors : = 900 nm (typ.) P Good radiant power output linearity with respect to input current Wide directivity : = 120 deg. (typ.) Absolute Maximum Ratings (Ta = 25˚ ...
Page 2
... Forward voltage V P — 10mA 1mA 1 –1 10 120 – Ambient temperature Ta (˚C ) Directivity characteristics 0˚ 10˚ 150 100 50 1020 LN175 100Hz Ta = 25˚ ( 100mA F 80 20˚ 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ 110˚ 120˚ 130˚ ...