SFH 4556 OSRAM Opto Semiconductors Inc, SFH 4556 Datasheet - Page 26

• Manufacturer Part Number: SFH 4556
• Description: EMITTER IR 850NM 5MM RADIAL
• Manufacturer: OSRAM Opto Semiconductors Inc

Specifications of SFH 4556

• Wavelength: 850nm
• Package / Case: Radial - 2 Lead
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 40mW/sr @ 100mA
• Voltage - Forward (vf) Typ: 1.5V
• Viewing Angle: 40°
• Orientation: Top View
• Mounting Type: Through Hole
• Beam Angle: +/- 20 deg
• Radiant Intensity: 130 mW/sr
• Maximum Forward Current: 100 mA
• Fall Time: 12 ns
• Mounting Style: Through Hole
• Operating Voltage: 1.5 V
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 475-2871; Q65110A6087; SFH 4556

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
132
TO39
DIL
SMT DIL
Photodetectors for special applications
Dual photodiodes
Package
Infrared Components
Silicon Photodetectors
Type
SFH 221
BPX 48
KOM 2125
http://catalog.osram-os.com
Half
angle
ϕ
[°]
± 55
± 60
± 60
Radiant
sensitive
area typ.
[mm
1.54
1.54
4 diode A
10 diode B
2
]
I
[μA]
24 (≥ 15)
24 (≥ 15)
40 (≥ 30)
diode A
100 (≥ 75)
diode B
P
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Measure-
ment cond.
E
lx, Std.
Light A, V
= 5 V
E
lx, Std.
Light A, V
= 5 V
E
lx, Std.
Light A, V
= 5 V
v
v
v
= 1000
= 1000
= 1000
R
R
R
I
[nA]
10 (≤
100)
10 (≤
100)
5 (≤ 30)
diode A
10 (≤ 30)
diode B
R
Measure-
ment
cond.
V
V
V
R
R
R
= 10 V
= 10 V
= 10 V
λ
typ.
[nm]
400 ...
1100
400 ...
1150
400 ...
1100
10%
t
typ
[μs]
0.5
0.5
0.018
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
L
L
L
= 5 V,
= 1 kΩ,
= 5 V,
= 1 kΩ,
= 5 V,
= 50 Ω,
Ordering Code
Q62702P0270
Q62702P0017S0
01
Q65110A2703
Technical Data
Package
Fig.
48
49
36