SEP8505-002 Honeywell Sensing and Control, SEP8505-002 Datasheet - Page 3

DIODE IR EMITTING GAAS T-1

SEP8505-002

Manufacturer Part Number
SEP8505-002
Description
DIODE IR EMITTING GAAS T-1
Manufacturer
Honeywell Sensing and Control
Datasheets

Specifications of SEP8505-002

Viewing Angle
15°
Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
1mW/sr @ 100mA
Wavelength
935nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 3mm Dia (T 1)
Peak Wavelength
935nm
Forward Current If(av)
50mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.5V
Operating Temperature Range
-55°C To +125°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
480-1961

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SEP8505-002
Manufacturer:
HoneyweLL
Quantity:
50 000
Fig. 1
Fig. 3
Fig. 5
SEP8505
GaAs Infrared Emitting Diode
38
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
870
-40
0
-30
890
Angular displacement - degrees
-20
Forward current - mA
910
Wavelength - nm
20
-10
930
0
950
+10 +20 +30 +40
40
970
990 1010
gra_027.ds4
gra_003.ds4
gra_005.ds4
60
Fig. 2
Fig. 4
Fig. 6
10.0
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
5.0
2.0
1.0
0.5
0.2
0.1
0.7
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8405
7
4
2
1
10
-40
0.01
Lens-to-lens separation - inches
0.02 0.04
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
0.1
I
T
V
F
A
30
35
CE
= 25 mA
= 25 °C
0.2
= 5 V
40 50
60
0.4 0.7 1
gra_028.ds4
gra_207.ds4
gra_029.ds4
100
85

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