QSB363GR Fairchild Optoelectronics Group, QSB363GR Datasheet
QSB363GR
Specifications of QSB363GR
Available stocks
Related parts for QSB363GR
QSB363GR Summary of contents
Page 1
QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24° Black Plastic Package Matched Emitters: QEB363 or QEB373 Package Dimensions 0.276 (7.0) MIN 0.024 (0.6) 0.016 (0.4) 0.074 (1.9) .118 ...
Page 2
Absolute Maximum Ratings Parameter Operating Temperature Storage Temperature (2,3,4) Soldering Temperature (Iron) (2,3) Soldering Temperature (Flow) Collector Emitter Voltage Emitter Collector Voltage (1) Power Dissipation Notes 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. ...
Page 3
Typical Performance Curves Fig. 1 Collector Power Dissipation vs. Ambient Temperature 100 - Ambient Temperature T Fig. 3 Relative Collector Current vs. Ambient Temperature 160 140 E ...
Page 4
Package Dimensions Features Three lead forming options: Gull Wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes Gull Wing Lead Configuration 0.098±0.004 (2.5±0.1) ø0.075±0.008 ...
Page 5
... Obsolete ISOPLANAR™ PowerSaver™ PowerTrench ® LittleFET™ QFET ® MICROCOUPLER™ MicroFET™ QS™ MicroPak™ QT Optoelectronics™ MICROWIRE™ Quiet Series™ RapidConfigure™ MSX™ RapidConnect™ MSXPro™ μSerDes™ OCX™ ScalarPump™ OCXPro™ ...