NCV7708AGEVB ON Semiconductor, NCV7708AGEVB Datasheet - Page 12

• Manufacturer Part Number: NCV7708AGEVB
• Description: EVAL BOARD FOR NCV7708AG
• Manufacturer: ON Semiconductor

Specifications of NCV7708AGEVB

• Design Resources: NCV7708 EVB BOM NCV7708GEVB Gerber Files NCV7708 EVB Schematic
• Main Purpose: Power Management, Half H-Bridge Driver (Internal FET)
• Embedded: No
• Utilized Ic / Part: NCV7708
• Primary Attributes: 6 Channel High & Low Side Internal Switch
• Secondary Attributes: SPI Interface
• Silicon Manufacturer: On Semiconductor
• Silicon Core Number: NCV7708A
• Kit Application Type: Driver - Bridge
• Application Sub Type: Half Bridge Driver
• Development Tool Type: Hardware - Eval/Demo Board
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: NCV7708AG
• Other names: NCV7708AGEVBOS

Applications Drawing
which this part can drive a multitude of loads.
H−Bridge Driver Configuration
driver independently. When the device is set up in an
H−Bridge configuration, the software design has to take care
of avoiding simultaneous activation of connected HS and LS
transistors. Resulting high shoot through currents could
cause irreversible damage to the device.
The applications drawing below displays the range with
Any combination of motors and high side drivers can be designed in. This allows for flexibility in many systems.
The NCV7708A has the flexibility of controlling each
Lead #1
+
Lead #8 (one of 8 thermal leads)
Active Area (red)
With and Without Mold Compound
Molded as
Package Construction
OUTHx
OUTLx
GND
OUTHx
VSx
OUTLx
VSx
GND
1
/
4
Figure 5. Application Drawing
Symmetry
1
http://onsemi.com
M
Thermal Model
12
Overvoltage Clamping − Driving Inductive Loads
in a single−side−mode (LS or HS switch, no freewheeling
path), the NCV7708A provides internal clamping diodes.
Thus any load type can be driven without the requirement of
external freewheeling diodes. Due to high power dissipation
during clamping, the maximum energy capability of the
driver transistor has to be considered.
To avoid excessive voltages when driving inductive loads
1. H−Bridge Driver configuration
2. Low Side Driver
3. High Side Driver
Various copper areas used
OUTHx
OUTLx
VSx
GND
for heat spreading
3
2