LM4879SDBD National Semiconductor, LM4879SDBD Datasheet - Page 5

• Manufacturer Part Number: LM4879SDBD
• Description: BOARD EVALUATION LM4879SD
• Manufacturer: National Semiconductor
• Series: Boomer®r

Specifications of LM4879SDBD

• Amplifier Type: Class AB
• Output Type: 1-Channel (Mono)
• Max Output Power X Channels @ Load: 1.1W x 1 @ 8 Ohm
• Voltage - Supply: 2.2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Board Type: Fully Populated
• Utilized Ic / Part: LM4879
• Lead Free Status / RoHS Status: Not applicable / Not applicable

N
I
I
V
P
THD+N
PSRR
DD
SD
Symbol
Symbol
OS
o
OUT
Electrical Characteristics V
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T
25˚C. (Continued)
Electrical Characteristics V
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
allowable power dissipation is P
curves for additional information.
Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor.
Note 5: Machine Model, 220pF–240pF discharged through all pins.
Note 6: Typicals are measured at 25˚C and represent the parametric norm.
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8: For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase I
Note 9: If the product is in shutdown mode, and V
If the source impedance limits the current to a max of 10ma, then the part will be protected. If the part is enabled when V
be curtailed or the part may be permanently damaged.
Note 10: All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance.
Note 11: Maximum power dissipation (P
Equation 1 shown in the Application section. It may also be obtained from the power dissipation graphs.
Note 12: The stated θ
Output Noise
Quiescent Power Supply Current
Shutdown Current
Output Offset Voltage
Output Power
Total Harmonic Distortion+Noise
Power Supply Rejection Ratio
JA
is achieved when the LLP package’s DAP is soldered to a 4in
Parameter
Parameter
DMAX
= (T
DMAX
JMAX
) in the device occurs at an output power level significantly below full output power. P
–T
A
DD
)/θ
JA
exceeds 6V (to a max of 8V V
or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4879, see power derating
DD
DD
A-Weighted; Measured across 8Ω
BTL
Input terminated with 10Ω to
ground
V
V
THD+N = 1% (max); f = 1kHz
R
R
P
V
1.0µF
Input terminated with 10Ω to
ground
IN
shutdown
L
L
o
ripple
= 3.0V
= 0.1Wrms; f = 1kHz
= 8Ω
= 4Ω
= 2.6V
= 0V, 8Ω BTL
= 200mVsine p-p, C
= GND
Conditions
Conditions
(Notes 1, 2)
(Notes 1, 2)
5
DD
), then most of the excess current will flow through the ESD protection circuits.
2
copper heatsink plain.
B
=
JMAX
55 (f = 1kHz)
, θ
JA
(Note 6)
(Note 6)
Typical
Typical
217Hz)
55 (f =
, and the ambient temperature T
250
350
3.5
0.1
0.1
26
5
LM4879
LM4879
DD
is above 6V, circuit performance will
(Notes 7, 8)
(Notes 7, 8)
DMAX
Limit
Limit
SD
can be calculated using
by a maximum of 2µA.
A
A
=
A
= 25˚C.
. The maximum
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(Limits)
(Limits)
µV
Units
Units
mW
mA
mV
µA
dB
%
RMS