ADM1041-EVAL Analog Devices Inc, ADM1041-EVAL Datasheet - Page 36

• Manufacturer Part Number: ADM1041-EVAL
• Description: BOARD EVALUATION ADM1041
• Manufacturer: Analog Devices Inc

Specifications of ADM1041-EVAL

• Main Purpose: AC/DC, Secondary Side
• Outputs And Type: 1, Non-Isolated
• Power - Output: 24W
• Voltage - Output: 12V
• Current - Output: 2A
• Voltage - Input: 85 ~ 132VAC
• Board Type: Fully Populated
• Utilized Ic / Part: ADM1041
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Switching: -
• Regulator Topology: -
• Lead Free Status / Rohs Status: Not Compliant

ADM1041
SMBus PROTOCOLS FOR RAM AND EEPROM
The ADM1041 contains volatile registers (RAM) and nonvola-
tile EEPROM. RAM occupies the address locations from 00h to
7Fh, while EEPROM occupies the address locations from 8000h
to 813Fh.
The SMBus specification defines several protocols for different
types of read and write operations. The ones used in the
ADM1041 are discussed in the next sections. The following
abbreviations are used in the diagrams:
S—START
P—STOP
R—READ
W—WRITE
A—ACKNOWLEDGE
A —NO ACKNOWLEDGE
The ADM1041 uses the following SMBus write protocols.
SMBus Erase EEPROM Page Operations
EEPROM memory can be written to only if it is effectively
unprogrammed. Before writing to one or more locations that
are already programmed, the page containing those locations
must be erased. EEPROM ERASE is performed by sending a
page erase command byte (A2h) followed by the page location
of what you want to erase. (There is no need to set an erase bit
in an EEPROM control/status register.)
The EEPROM consists of 16 pages of 32 bytes each; the register
default EEPROM consists of 1 page of 32 bytes starting at 8100h.
Table 7. EEPROM Page Layout
Page No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
EEPROM Location
8000h to 801Fh
8020h to 803Fh
8040h to 8050h
8060h to 8070h
8080h to 8090h
80A0h to 80BFh
80C0h to 80DFh
80E0h to 80FFh
8100h to 811Fh
8120h to 813Fh
8140h to 815Fh
8160h to 817Fh
8180h to 819Fh
81A0h to 81BFh
81C0h to 81DFh
81E0h to 81FFh
Description
Available FRU
Available FRU
Available FRU
Available FRU
Available FRU
Available FRU
Available FRU
Available FRU
Configuration Boot Registers
ADI Registers
Available FRU
Available FRU
Available FRU
Available FRU
Available FRU
ADI Registers
Rev. A | Page 36 of 64
The EEPROM page address consists of the EEPROM address
high Byte 80h for FRU or 81h for register default and the three
MSBs of the low byte. The lower five bits of the EEPROM
address of the low byte are ignored during an erase operation.
Page erasure takes approximately 20 ms. If the EEPROM is
accessed before erasure is complete, the SMBus responds with
No Acknowledge.
Figure 29 shows the peak I
page erase operation. Decoupling capacitors of 10 µF and 100
nF are recommended on V
SMBus Write Operations
Send Byte
In this operation, the master device sends a single command
byte to a slave device, as follows:
1.
2.
3.
4.
5.
6.
S
1
ADDRESS
SLAVE
The master device asserts a start condition on SDA.
The master sends the 7-bit slave address followed by the
write bit (low).
The addressed slave device asserts ACK on SDA.
The master sends a command code.
The slave asserts ACK on SDA.
The master asserts a stop condition on SDA and the
transaction ends.
2
W A
Figure 29. EEPROM Page Erase Peak I
3
COMMAND A2h
(PAGE ERASE)
Figure 28. EEPROM Page Erase Operation
4
DD
A
5
DD
(80h OR 81h)
supply current during an EEPORM
HIGH BYTE
ADDRESS
.
EEPROM
6
7
A
(00h TO FFh)
LOW BYTE
ADDRESS
EEPROM
DD
8
Current
9
A
ARBITRARY
DATA
10
11 12
A P