EVLVIP27L-12WS STMicroelectronics, EVLVIP27L-12WS Datasheet
EVLVIP27L-12WS
Specifications of EVLVIP27L-12WS
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EVLVIP27L-12WS Summary of contents
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Features ■ Low ratio (no cross conduction RES IES susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode Applications ■ High frequency inverters ■ UPS ■ Motor drivers ■ Induction heating Description This IGBT utilizes the advanced ...
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Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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STGW45NC60VD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Collector-emitter voltage (V CES (1) Collector current (continuous ° (1) Collector current (continuous) at 100 ° (2) Turn-off latching current I CL (3) ...
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Electrical characteristics 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ...
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STGW45NC60VD Table 6. Switching on/off (inductive load) Symbol t Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt) onf t Turn-on delay time d(on) t Current rise time r Turn-on current slope (di/dt Off ...
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Electrical characteristics Table 8. Collector-emitter diode Symbol V Forward on-voltage F t Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I rrm t Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I ...
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STGW45NC60VD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 4. Transconductance Figure 6. Collector-emitter on voltage vs collector current Electrical characteristics Figure 3. Transfer characteristics Figure 5. Collector-emitter on voltage vs temperature Figure 7. Normalized gate threshold vs temperature ...
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Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 10. Capacitance variations Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector 8/15 Figure 9. Gate charge vs gate-emitter voltage Figure 11. Switching losses vs temperature ...
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STGW45NC60VD Figure 14. Thermal impedance Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 Tj=125°C Tj=125°C (Maximum values) (Maximum values) 100 90 80 Tj=125°C Tj=125°C 70 (Typical values) (Typical values VFM( ...
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Electrical characteristics Equation CE(SAT) with 50% of duty cycle, V ● Power dissipation during ON and OFF commutations is due to the switching frequency: Equation ...
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STGW45NC60VD 3 Test circuit Figure 18. Test circuit for inductive load switching Figure 20. Switching waveforms Figure 19. Gate charge test circuit Figure 21. Diode recovery times waveform Test circuit 11/15 ...
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Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and ...
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STGW45NC60VD Dim DIA TO-247 long leads mechanical data mm Min. Typ. 4.85 2.2 0.4 1 1.9 3 10.9 15.45 19.85 3.7 ...
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Revision history 5 Revision history Table 9. Document revision history Date 19-Mar-2008 14/15 Revision 1 First release STGW45NC60VD Changes ...
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... STGW45NC60VD Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...