C4532X5R1C336M TDK Corporation, C4532X5R1C336M Datasheet - Page 56

• Manufacturer Part Number: C4532X5R1C336M
• Description: CAP CER 33UF 16V X5R 20% 1812
• Manufacturer: TDK Corporation
• Series: Cr

Specifications of C4532X5R1C336M

• Capacitance: 33µF
• Voltage - Rated: 16V
• Tolerance: ±20%
• Temperature Coefficient: X5R
• Mounting Type: Surface Mount, MLCC
• Operating Temperature: -55°C ~ 85°C
• Features: Low ESR
• Applications: General Purpose
• Package / Case: 1812 (4532 Metric)
• Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
• Thickness: 2.50mm
• Dielectric Characteristic: X5R
• Capacitance Tolerance: ± 20%
• Voltage Rating: 16VDC
• Capacitor Case Style: 1812
• No. Of Pins: 2
• Capacitor Mounting: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Ratings: -
• Lead Spacing: -
• Other names: 445-1443-2; C4532X5R1C336MT

• All specifications are subject to change without notice. Please read the precautions before using the product.
US Catalog // C Series — General Application // Version A11
No.
15
General
Specifications
Item
Moisture Resistance (Steady State)
External
appearance
Capacitance
Q
(Class 1)
D.F.
(Class 2)
Insulation
Resistance
Performance
No mechanical damage.
Characteristics
X5R: 200% of initial spec. max.
X7R: 200% of initial spec. max
Y5V: 150% of initial spec. max
1,000MΩ or 50MΩ•μF min.
(As for the capacitors of rated voltage
16, 10 and 6.3V DC, 1,000 MΩ or
10MΩ•μF min.,) whichever smaller.
Characteristics
Class 1
Class 2
Rated
Capacitance
C ≥ 30pF
10pF ≤ C < 30pF
C <10pF
C0G
X5R
X7R
Y5V
C : Rated capacitance (pF)
Change from the
value before test
±5% or ±0.5pF,
whichever larger.
± 25 %
± 25 %
± 30 %
Q
350 min.
275+5/2×C min.
200+10×C min.
C Series — General Application
Test or Inspection Method
Reflow solder the capacitor on P.C. board (shown in
Appendix 1a or Appendix 1b) before testing.
Leave at temperature 40±2ºC, 90 to 95%RH for 500
+24,0h.
Leave the capacitor in ambient conditions for 6 to 24h
(Class 1) or 24±2h (Class 2) before measurement.