IRF6633 International Rectifier, IRF6633 Datasheet

IRF6633

Manufacturer Part Number

IRF6633

Description

DirectFET Power MOSFET

Manufacturer

International Rectifier

Datasheet

1.IRF6633.pdf (9 pages)

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Description

The IRF6633 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows

dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching

losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors

operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt

buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Notes:

www.irf.com

Absolute Maximum Ratings

RoHs Compliant Containing No Lead and Bromide

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for both Sync.FET and some Control FET

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

application

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance Vs. Gate Voltage

2.0

V GS , Gate-to-Source Voltage (V)

4.0

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

Ãg

T J = 125°C

T J = 25°C

8.0

I D = 16A

Parameter

10.0

@ 10V

„

…

†

20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V

11nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

4.0nC

= 25°C, L = 0.51mH, R

I D = 13A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.2nC

gs2

Max.

V DS = 16V

VDS= 10V

132

±20

www.DataSheet4U.com

DS(on)

32nC

= 25Ω, I

IRF6633

packaging to achieve the

DirectFET™ ISOMETRIC

8.8nC

= 13A.

oss

DS(on)

Units

1.8V

gs(th)

6/2/05

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