IRF7524D1 International Rectifier, IRF7524D1 Datasheet
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IRF7524D1
Manufacturer Part Number
IRF7524D1
Description
FETKY MOSFET & Schottky Diode(Vdss=-20V/ Rds(on)=0.27ohm/ Schottky Vf=0.39V)
Manufacturer
International Rectifier
Datasheet
1.IRF7524D1.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7524D1TR
Manufacturer:
Infineon
Quantity:
2 300
Part Number:
IRF7524D1TR
Manufacturer:
IR
Quantity:
20 000
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
Notes:
The FETKY
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
www.irf.com
Parameter
R
I
I
I
P
P
V
dv/dt
T
D
D
DM
D
D
GS
J,
Pulse width
JA
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
Co-packaged HEXFET
MOSFET and Schottky Diode
P-Channel HEXFET
Generation 5 Technology
Micro8
@ T
@ T
SD
Low V
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
T
@T
@T
STG
A
A
A
A
-1.2A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
TM
Schottky Rectifier
Footprint
TM
family of co-packaged HEXFETs and Schottky diodes offer the
300µs – duty cycle
package, with half the footprint area of the standard SO-8, provides
100A/µs, V
Parameter
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
TM
Junction-to-Ambient
DD
will allow it to fit easily into extremely thin application
V
Power
2%
(BR)DSS
, T
PRELIMINARY
J
150°C
GS
G
A
S
A
@ -4.5V
FETKY MOSFET & Schottky Diode
1
2
3
4
T op V ie w
TM
TM
an ideal
8
7
6
5
-55 to +150
Maximum
IRF7524D1
Maximum
K
1.25
± 12
K
D
D
-1.7
-1.4
-5.0
-14
0.8
10
100
Schottky Vf = 0.39V
R
DS(on)
V
DSS
Micro8
= -20V
= 0.27
TM
Units
mW/°C
°C/W
Units
V/ns
W
°C
A
V
PD -91648C
1
01/29/99