IRF9540S Vishay, IRF9540S Datasheet
IRF9540S
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IRF9540S Summary of contents
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... PAK (TO-263) IRF9540SPbF SiHF9540S-E3 IRF9540S SiHF9540S = 25 °C, unless otherwise noted ° 100 ° ° for Ω (see fig. 12 ≤ 175 ° IRF9540S, SiHF9540S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263) a IRF9540STRLPbF a SiHF9540STL-E3 a IRF9540STRL a SiHF9540STL SYMBOL LIMIT V - 100 DS V ± ...
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... IRF9540S, SiHF9540S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...
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... Drain-to-Source Voltage ( 91079_02 Fig Typical Output Characteristics, T Document Number: 91079 S09-0046-Rev. A, 19-Jan- µs Pulse Width °C C 91079_03 = 25 ° 4 µs Pulse Width T = 175 °C C 91079_04 = 175 °C C IRF9540S, SiHF9540S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF9540S, SiHF9540S Vishay Siliconix 3000 MHz iss gs 2500 rss oss ds 2000 1500 1000 500 Drain-to-Source Voltage ( 91079_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91079_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91079_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91079 S09-0046-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9540S, SiHF9540S Vishay Siliconix D.U. 0.01 Ω Fig. 10a - Switching Time Test Circuit d(on) r d(off) ...
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... IRF9540S, SiHF9540S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 2000 Top 1600 Bottom 1200 800 400 100 125 50 Starting T , Junction Temperature (°C) 91079_12c J Fig ...
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... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9540S, SiHF9540S Vishay Siliconix + + P. www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...