IRFR9310 Vishay, IRFR9310 Datasheet
IRFR9310
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IRFR9310 Summary of contents
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... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91284 S-82992-Rev. B, 12-Jan-09 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Power MOSFET FEATURES • P-Channel - 400 • Surface Mount (IRFR9310/SiHFR9310) 7.0 • Straight Lead (IRFU9310/SiHFU9310) 13 • Advanced Process Technology 3.2 • Fast Switching 5.0 • ...
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... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Document Number: 91284 S-82992-Rev. B, 12-Jan-09 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix www.vishay.com 3 ...
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... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS TOP -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 1 -4.5V 20μs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics 10 VGS TOP -15V -10V -8.0V -7.0V -6.0V -5 ...
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... V =-80V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91284 S-82992-Rev. B, 12-Jan-09 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 C SHORTED ds 0.1 100 Fig Typical Source-Drain Diode Forward Voltage 100 10 SEE FIGURE 13 0 Vishay Siliconix 10 ° 150 C ...
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... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix 2.0 1.6 1.2 0.8 0.4 0 100 T , Case Temperature ( C) C Fig Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.1 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case www ...
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... D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform Document Number: 91284 S-82992-Rev. B, 12-Jan-09 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 - Driver 15 V 300 TOP 250 BOTTOM 200 150 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix D.U. Compliment N-Channel of D.U.T. for driver Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...