KSD1273Q Fairchild Semiconductor, KSD1273Q Datasheet
首页 Discrete Semiconductor Products Transistors (BJT) - Single KSD1273Q
Manufacturer Part Number
KSD1273Q
Description
TRANSISTOR NPN 60V 3A TO-220F
Manufacturer
Fairchild Semiconductor
Specifications of KSD1273Q
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 2A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
500 @ 500mA, 4V
Power - Max
2W
Frequency - Transition
30MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2001 Fairchild Semiconductor Corporation
High h
• ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
I
I
P
T
T
I
V
V
V
P
BV
I
I
h
V
f
FE
no Insulator.
C
CP
B
CEO
CBO
EBO
T
J
STG
FE
C
CBO
CEO
EBO
C
CE
Symbol
Symbol
CEO
(sat)
Classification
Classification
FE
, AF Power Amplifier
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Parameter
a
C
T
=25 C)
=25 C)
500 ~ 1000
C
=25 C unless otherwise noted
Parameter
T
C
Q
=25 C unless otherwise noted
KSD1273
I
V
V
V
V
V
I
C
C
CB
CE
EB
CE
CE
= 25mA, I
= 2A, I
Test Condition
= 80V, I
= 60V, I
= 6V, I
= 4V, I
= 12V, I
B
800 ~ 1500
C
C
= 0.05A
E
B
C
B
= 0
= 0.5A
= 0
= 0
= 0
= 0.2A
P
1
1.Base
Min.
500
60
- 55 ~ 150
2.Collector
Value
150
80
60
40
3
6
1
2
6
TO-220F
Typ.
30
1200 ~ 2500
3.Emitter
2500
O
Max.
100
100
100
1
Rev. A1, June 2001
Units
W
W
V
V
V
A
A
A
Units
C
C
MHz
V
V
A
A
A
Related parts for KSD1273Q
KSD1273Q Summary of contents
... Collector Cut-off Current CEO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T h Classification FE Classification h FE ©2001 Fairchild Semiconductor Corporation KSD1273 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition I = 25mA 80V, I ...
... Figure 1. Static Characteristic 10000 1000 100 10 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. DC current Gain 10000 V (sat) 1000 BE 100 10 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Collector-Base Saturation Voltage ©2001 Fairchild Semiconductor Corporation 10000 I = 1.2mA 1mA B 1000 I = 800uA 600uA 400uA B 100 I = 200uA ...
... Typical Characteristics 1000 100 [V], COLLECTO-BASE VOLTAGE CB Figure 7. Collector Output Capacitance 10 I max(pulse (max 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 9. Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 1000 f = 1MHz 100 10 1 100 1000 0.01 Figure 8. Current Gain Bandwidth Product (3) 0 100 0 0.1 ...
... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A1, June 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...
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