LPC662AI National Semiconductor Corporation, LPC662AI Datasheet

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LPC662AI

Manufacturer Part Number
LPC662AI
Description
LPC662 - Low Power CMOS Dual Operational Amplifier, Package: Soic Narrow, Pin Nb=8
Manufacturer
National Semiconductor Corporation
Datasheet

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© 2001 National Semiconductor Corporation
LPC662
Low Power CMOS Dual Operational Amplifier
General Description
The LPC662 CMOS Dual operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltage from +5V to +15V, rail-to-rail output swing
in addition to an input common-mode range that includes
ground. Performance limitations that have plagued CMOS
amplifiers in the past are not a problem with this design.
Input V
(into 100 k
accepted bipolar equivalents, while the power supply
requirement is typically less than 0.5 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational
amplifier and LPC661 for a single CMOS operational
amplifier with these same features.
Applications
n High-impedance buffer
n Precision current-to-voltage converter
Application Circuit
OS
, drift, and broadband noise as well as voltage gain
and 5 k ) are all equal to or better than widely
DS010548
Howland Current Pump
n Long-term integrator
n High-impedance preamplifier
n Active filter
n Sample-and-Hold circuit
n Peak detector
Features
n Rail-to-rail output swing
n Micropower operation (
n Specified for 100 k
n High voltage gain
n Low input offset voltage
n Low offset voltage drift
n Ultra low input bias current
n Input common-mode includes GND
n Operating range from +5V to +15V
n Low distortion
n Slew rate
n Full military temperature range available
DS010548-23
and 5 k
<
0.5 mW)
loads
0.01% at 1 kHz
www.national.com
August 2000
1.3 µV/˚C
0.11 V/µs
120 dB
3 mV
2 fA

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