mrf6vp41kh Freescale Semiconductor, Inc, mrf6vp41kh Datasheet
mrf6vp41kh
Manufacturer Part Number
mrf6vp41kh
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MRF6VP41KH.pdf
(13 pages)
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© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
‘
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
450 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Features
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed primarily for pulsed wideband applications with frequencies up to
P
Power
Operation
out
Power Gain — 20 dB
Drain Efficiency — 64%
= 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
Rating
DD
Operation
DD
= 50 Volts, I
DQ
= 150 mA,
Symbol
V
V
T
T
DSS
T
GS
stg
CASE 375D - 05, STYLE 1
CASE 375E - 04, STYLE 1
RF
RF
C
J
Document Number: MRF6VP41KH
inA
inB
MRF6VP41KHSR6
MRF6VP41KHR6 MRF6VP41KHSR6
MRF6VP41KHSR6
MRF6VP41KHR6
/V
/V
MRF6VP41KHR6
10 - 450 MHz, 1000 W, 50 V
GSA
GSB
Figure 1. Pin Connections
LATERAL N - CHANNEL
NI - 1230S
PARTS ARE PUSH - PULL
RF POWER MOSFETs
NI - 1230
3
4
BROADBAND
- 65 to +150
- 0.5, +110
- 6, +10
Value
(Top View)
150
200
Rev. 0, 1/2008
1
2 RF
RF
outA
outB
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1