PVD1352 International Rectifier, PVD1352 Datasheet
PVD1352
Specifications of PVD1352
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PVD1352 Summary of contents
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... MOS technology to form NPN transistors, P-channel MOSFETs, resistors, di- odes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVD microelectronic power IC relay. ...
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8,!! Electrical Specifications (-40 C INPUT CHARACTERISTICS Minimum Control Current (see figures 1 and 2) For 160mA Continuous Load Current For 200mA Continuous Load Current For 90mA Continuous Load Current Maximum Control Current for Off-State Resistance ...
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Replaced by PVD33N Ambient Temperature (°C) Figure 1. Current Derating Curves V DS (Volts) Figure 3.Typical On Characteristics 3 I LED (mA) Figure 2. Typical Control Current Requirements Ambient Temperature (°C) Figure 4. Typical On-Resistance 5AHE 8,!! ...
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8,!! Ambient Temperature (°C) Figure 5. Normalized Off-State Leakage Delay Time (microseconds) Figure 7.Typical Delay Times Replaced by PVD33N LED Forward Voltage Drop (Volts DC) Figure 6. Input Characteristics Figure 8. Delay Time Definitions 4 (Current ...
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Wiring Diagram 5 Replaced by PVD33N V DS Drain to Source Voltage Figure 9. Typical Output Capacitance 5AHE 8,!! ...
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8,!! Case Outline Mechanical Specifications: Package: 8-pin DIP Tolerances: .015 (.38) unless otherwise specified Case Material: molded epoxy Weight: .07 oz. (2 gr.) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 http://www.irf.com/ ...