PESD5V0S2BT,215 NXP Semiconductors, PESD5V0S2BT,215 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0S2BT,215
• Description: DIODE BIDIR ESD PROTECT SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 14 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4056-2; 934058007215; PESD5V0S2BT T/R; PESD5V0S2BT T/R

NXP Semiconductors
PESD5V0S2BT_3
Product data sheet
Fig 5.
(pF)
C
d
38
34
30
26
22
0
T
Diode capacitance as a function of reverse
voltage; typical values
amb
= 25 C; f = 1 MHz
1
2
3
4
001aaa634
V
R
(V)
Rev. 03 — 9 February 2009
5
Low capacitance bidirectional double ESD protection diode
Fig 6.
I
R(85 C)
I
R
10
10
10
1
2
1
75
I
Relative variation of reverse current as a
function of junction temperature; typical
values
R
< 1 nA measured at T
100
PESD5V0S2BT
amb
= 25 C
125
© NXP B.V. 2009. All rights reserved.
T
j
001aaa635
( C)
150
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