PIC18F452-I/ML Microchip Technology, PIC18F452-I/ML Datasheet - Page 270

• Manufacturer Part Number: PIC18F452-I/ML
• Description: IC MCU FLASH 16KX16 A/D 44QFN
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F452-I/ML

• Core Size: 8-Bit
• Program Memory Size: 32KB (16K x 16)
• Core Processor: PIC
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-QFN
• Controller Family/series: PIC18
• No. Of I/o's: 34
• Eeprom Memory Size: 256Byte
• Ram Memory Size: 1.5KB
• Cpu Speed: 40MHz
• No. Of Timers: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT44QFN2 - SOCKET TRAN ICE 44QFN/40DIP444-1001 - DEMO BOARD FOR PICMICRO MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PIC18FXX2
TABLE 22-2:
DS39564C-page 268
DC Characteristics
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Param
No.
Note 1: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
only and are not tested.
DDP
Sym
DEW
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
P
PR
IE
IW
PEW
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program FLASH Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
(1)
pin
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
MIN
MIN
MIN
1
100K
Typ†
10M
1M
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
-40°C
Units
Year Provided no other
Year Provided no other
E/W -40 C to +85 C
E/W -40°C to +85°C
E/W -40 C to +85 C
mA
ms
ms
ms
ms
V
V
V
V
V
V
T
T
A
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP port
Using ICSP port
V
voltage
V
V
specifications are violated
© 2006 Microchip Technology Inc.
+85°C for industrial
MIN
MIN
MIN
DD
DD
+125°C for extended
= Minimum operating
= Minimum operating
= Minimum operating
4.5V
4.5V
Conditions