ATTINY88-15MZ Atmel, ATTINY88-15MZ Datasheet - Page 197

• Manufacturer Part Number: ATTINY88-15MZ
• Description: IC MCU AVR 8B 8KB FLASH 32QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY88-15MZ

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, SPI
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 28
• Program Memory Size: 8KB (4K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20.7.2
20.7.3
20.7.4
9157B–AVR–01/10
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
are not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”:
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
B. Load Address Low byte
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give CLKI a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give CLKI a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 – 0xFF).
4. Give CLKI a positive pulse. This loads the address low byte.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Table 20-7 on page
(Note:)
ATtiny88 Automotive
memories plus Lock bits. The Lock bits
194. When programming the Flash,
197