PIC18F6720T-I/PT Microchip Technology, PIC18F6720T-I/PT Datasheet - Page 84
![IC MCU FLASH 64KX16 W/AD 64-TQFP](/photos/6/81/68123/c04-066_pf_sml.jpg)
PIC18F6720T-I/PT
Manufacturer Part Number
PIC18F6720T-I/PT
Description
IC MCU FLASH 64KX16 W/AD 64-TQFP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F8520T-IPT.pdf
(380 pages)
3.PIC18F8520T-IPT.pdf
(40 pages)
4.PIC18F6620-IPT.pdf
(14 pages)
5.PIC18F6620-IPT.pdf
(12 pages)
Specifications of PIC18F6720T-I/PT
Core Processor
PIC
Core Size
8-Bit
Speed
25MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
52
Program Memory Size
128KB (64K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.75K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TFQFP
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3.75 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
52
Number Of Timers
2 x 8 bit
Operating Supply Voltage
4.2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136, DM183032, DM183022
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit
For Use With
MA180020 - MODULE PLUG-IN HPC EXPL 18F87J11
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F6720T-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- PIC16F616T-ISL PDF datasheet
- PIC18F8520T-IPT PDF datasheet #2
- PIC18F8520T-IPT PDF datasheet #3
- PIC18F6620-IPT PDF datasheet #4
- PIC18F6620-IPT PDF datasheet #5
- Current page: 84 of 380
- Download datasheet (7Mb)
PIC18F6520/8520/6620/8620/6720/8720
7.5
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
7.6
There are conditions when the user may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared.
Also, the Power-up Timer (72 ms duration) prevents
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch, or software malfunction.
7.7
Data EEPROM memory has its own code-protect
mechanism. External read and write operations are
disabled if either of these mechanisms are enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect configuration bit. Refer to Section 23.0
“Special Features of the CPU” for additional
information.
EXAMPLE 7-3:
DS39609B-page 82
Loop
Write Verify
Protection Against Spurious Write
Operation During Code-Protect
CLRF
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ EEADR, F
BRA
INCFSZ EEADRH, F
BRA
BCF
BSF
EEADR
EEADRH
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
AAh
EECON2
EECON1, WR
EECON1, WR
$-2
Loop
Loop
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
; Start at address 0
;
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Increment the high address
; Not zero, do it again
; Disable writes
; Enable interrupts
7.8
The data EEPROM is a high endurance, byte address-
able array that has been optimized for the storage of
frequently changing information (e.g., program vari-
ables or other data that are updated often). Frequently
changing values will typically be updated more often
than specification D124. If this is not the case, an array
refresh must be performed. For this reason, variables
that change infrequently (such as constants, IDs,
calibration, etc.) should be stored in Flash program
memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
Note:
Using the Data EEPROM
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124.
2004 Microchip Technology Inc.
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