C8051F311-GMR Silicon Laboratories Inc, C8051F311-GMR Datasheet - Page 112

• Manufacturer Part Number: C8051F311-GMR
• Description: IC 8051 MCU 16K FLASH 28MLP
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F31xr

Specifications of C8051F311-GMR

• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, Temp Sensor, WDT
• Number Of I /o: 25
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1.25K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 17x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Package: 24QFN EP
• Device Core: 8051
• Family Name: C8051F31x
• Maximum Speed: 25 MHz
• Operating Supply Voltage: 3.3 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 25
• Interface Type: I2C/SMBus/SPI/UART
• On-chip Adc: 17-chx10-bit
• Number Of Timers: 4
• For Use With: 336-1446 - ADAPTER PROGRAM TOOLSTICK F311336-1253 - DEV KIT FOR C8051F310/F311
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

C8051F310/1/2/3/4/5/6/7
10.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 5–7 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
10.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. Note: MOVX read instructions always target XRAM.
112
V
*Note: 512 bytes at locations 0x3E00 (C8051F310/1) are reserved.
DD
Erase Cycle Time
Write Cycle Time
= 2.7 to 3.6 V; –40 to +85 °C unless otherwise specified.
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Clear the PSEE bit (register PSCTL).
Step 5. Write the first key code to FLKEY: 0xA5.
Step 6. Write the second key code to FLKEY: 0xF1.
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the
10.1.2.
512 byte sector.
Table 10.1. Flash Electrical Characteristics
25 MHz System Clock
25 MHz System Clock
C8051F310/1/6/7
C8051F312/3/4/5
Conditions
Rev. 1.7
16384*
8192
20 k
Min
10
40
100 k
Typ
15
55
—
—
Max
20
70
—
—
—
Erase/Write
Section
Units
bytes
ms
µs