PIC18F8620T-E/PT Microchip Technology, PIC18F8620T-E/PT Datasheet - Page 8
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PIC18F8620T-E/PT
Manufacturer Part Number
PIC18F8620T-E/PT
Description
IC PIC MCU FLASH 32KX16 80TQFP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F8520T-IPT.pdf
(380 pages)
3.PIC18F8520T-IPT.pdf
(40 pages)
4.PIC18F6620-IPT.pdf
(14 pages)
5.PIC18F6620-IPT.pdf
(12 pages)
Specifications of PIC18F8620T-E/PT
Core Processor
PIC
Core Size
8-Bit
Speed
25MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.75K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
80-TFQFP
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3840 B
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
68
Number Of Timers
2 x 8 bit
Operating Supply Voltage
4.2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136, DM183022, DM183032
Minimum Operating Temperature
- 40 C
On-chip Adc
16 bit
Data Rom Size
1024 B
Height
1 mm
Length
12 mm
Supply Voltage (max)
5.5 V, 5.8 V
Supply Voltage (min)
3.9 V, 4.2 V
Width
12 mm
For Use With
XLT80PT3 - SOCKET TRAN ICE 80MQFP/TQFPAC164320 - MODULE SKT MPLAB PM3 80TQFPAC174011 - MODULE SKT PROMATEII 80TQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F8620T-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
PIC18FXX20
DS39583C-page 8
3.1.1
When using low voltage ICSP, the part must be
supplied by the voltage specified in parameter #D111,
if a bulk erase is to be executed. All other bulk erase
details as described above apply.
If it is determined that a program memory erase must
be performed at a supply voltage below the bulk erase
limit, refer to the erase methodology described in
Sections 3.1.2 and 3.2.2.
If it is determined that a data EEPROM erase must be
performed at a supply voltage below the bulk erase
limit, follow the methodology described in Section 3.3
and write ones to the array.
LOW VOLTAGE ICSP BULK ERASE
3.1.2
Irrespective of whether high or low voltage ICSP is
used, it is possible to erase single row (64 bytes of
data) in all panels at once. For example, in the case of
a 64-Kbyte device (8 panels), 512 bytes through 64
bytes in each panel can be erased simultaneously dur-
ing each erase sequence. In this case, the offset of the
erase within each panel is the same (see Figure 3-6).
Multi-panel single row erase is enabled by appropri-
ately configuring the Programming Control register
located at 3C0006h.
The multi-panel single row erase duration is externally
timed and is controlled by SCLK. After a “Start Pro-
gramming” command is issued (4-bit, ‘1111’), a NOP is
issued, where the 4th SCLK is held high for the
duration of the programming time, P9.
After SCLK is brought low, the programming sequence
is terminated. SCLK must be held low for the time spec-
ified by parameter P10 to allow high voltage discharge
of the memory array.
The code sequence to program a PIC18FXX20 device
is shown in Table 3-2. The flowchart shown in
Figure 3-4 depicts the logic necessary to completely
erase a PIC18FXX20 device. The timing diagram that
details the “Start Programming” command, and
parameters P9 and P10 is shown in Figure 3-7.
Note:
The TBLPTR register must contain the
same offset value when initiating the pro-
gramming sequence as it did when the
write buffers were loaded.
ICSP MULTI-PANEL SINGLE ROW
ERASE
2010 Microchip Technology Inc.