MHV5IC1810NR2 Freescale Semiconductor, MHV5IC1810NR2 Datasheet - Page 7

• Manufacturer Part Number: MHV5IC1810NR2
• Description: IC RF POWER AMP 5W 28V 16-PFP
• Manufacturer: Freescale Semiconductor

Specifications of MHV5IC1810NR2

• Current - Supply: 90mA
• Frequency: 1.8GHz ~ 1.99GHz
• Gain: 29dB
• P1db: 10W
• Package / Case: 16-PFP
• Rf Type: Cellular, GSM, DCS, EDGE
• Voltage - Supply: 28V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Operating Supply Voltage (min): 24V
• Operating Supply Voltage (typ): 28V
• Operating Supply Voltage (max): 32V
• Package Type: PFP
• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
36
34
32
30
28
26
24
0.1
V
I
DQ2
DD
T
Figure 10. Power Gain and Power Added
C
= 28 Vdc, I
= 90 mA, f = 1960 MHz
= --30_C
Efficiency versus CW Output Power
25_C
85_C
P
out
DQ1
, OUTPUT POWER (WATTS) CW
= 120 mA
1
G
PAE
ps
TYPICAL CHARACTERISTICS — 1930- -1990 MHz
33
32
31
30
29
28
27
26
47
45
43
41
39
37
35
1800
--30_C
--2
10
V
Two--Tone Measurements, Center Frequency = 1960 MHz
Figure 9. Pulse CW Output Power versus Input
P1dB = 42 dBm (15.85 W)
DD
85_C
= 28 Vdc, P
Figure 12. Power Gain versus Frequency
25_C
P3dB = 42.5 dBm (17.78 W)
0
1850
out
T
= 1 W Avg., I
C
P
= --30_C
2
100
in
, INPUT POWER (dBm)
60
50
40
30
20
10
25_C
f, FREQUENCY (MHz)
V
I
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1960 MHz
0
85_C
DQ1
DD
= 28 Vdc
Power
= 120 mA, I
1900
DQ1
4
= 120 mA, I
DQ2
34
32
30
28
26
24
22
20
18
16
14
12
10
6
= 90 mA
0
DQ2
1950
Ideal
Figure 11. Power Gain versus Output Power
2
= 90 mA
V
8
4
DD
Actual
= 12 V
P
6
out
16 V
, OUTPUT POWER (WATTS) CW
2000
10
8
10
20 V
12
24 V
14
16
28 V
MHV5IC1810NR2
18
I
I
f = 1960 MHz
DQ1
DQ2
20
= 120 mA
= 90 mA
32 V
22
24
7