MHV5IC1810NR2 Freescale Semiconductor, MHV5IC1810NR2 Datasheet - Page 8

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MHV5IC1810NR2

Manufacturer Part Number
MHV5IC1810NR2
Description
IC RF POWER AMP 5W 28V 16-PFP
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MHV5IC1810NR2

Current - Supply
90mA
Frequency
1.8GHz ~ 1.99GHz
Gain
29dB
P1db
10W
Package / Case
16-PFP
Rf Type
Cellular, GSM, DCS, EDGE
Voltage - Supply
28V
Manufacturer's Type
Power Amplifier
Number Of Channels
1
Frequency (max)
1.99GHz
Operating Supply Voltage (min)
24V
Operating Supply Voltage (typ)
28V
Operating Supply Voltage (max)
32V
Package Type
PFP
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
MHV5IC1810NR2
Manufacturer:
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Quantity:
20 000
Company:
Part Number:
MHV5IC1810NR2
Quantity:
622
8
MHV5IC1810NR2
10
8
6
4
2
0
0.1
Figure 15. MTTF Factor versus Junction Temperature
10
10
10
10
10
8
7
6
5
4
90
Figure 13. EVM and Power Added Efficiency
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
100
P
1st Stage
110
out
T
, OUTPUT POWER (WATTS) AVG.
versus Output Power
J
PAE
, JUNCTION TEMPERATURE (°C)
2nd Stage
D
1
120
2
for MTTF in a particular application.
130
T
EVM
C
= 85_C
140
TYPICAL CHARACTERISTICS — 1930- -1990 MHz
150
10
V
I
I
f = 1960 MHz
EDGE Modulation
DQ1
DQ2
DD
160
--30_C
25_C
= 28 Vdc
= 105 mA
= 90 mA
170
180
2
100
50
40
30
10
0
20
190
--100
--110
--10
--20
--30
--40
--50
--60
--70
--80
--90
--45
--50
--55
--60
--65
--70
--75
--80
--85
Center 1.96 GHz
Figure 14. Spectral Regrowth at 400 and 600 kHz
0.1
600 kHz
Reference Power
400 kHz
SR @ 600 kHz
SR @ 400 kHz
Figure 16. EDGE Spectrum
P
out
GSM TEST SIGNAL
versus Output Power
, OUTPUT POWER (WATTS) AVG.
1
200 kHz
T
C
= 85_C
85_C
Freescale Semiconductor
VBW = 30 kHz
Sweep Time = 70 ms
VBW = 30 kHz
10
--30_C
--30_C
RF Device Data
V
I
I
f = 1960 MHz
EDGE Modulation
DQ1
DQ2
DD
25_C
400 kHz
25_C
Span 2 MHz
= 28 Vdc
= 105 mA
= 90 mA
600 kHz
100

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