CGH40180PP-TB Cree Inc, CGH40180PP-TB Datasheet

BOARD DEMO AMP CIRCUIT CGH40180

CGH40180PP-TB

Manufacturer Part Number
CGH40180PP-TB
Description
BOARD DEMO AMP CIRCUIT CGH40180
Manufacturer
Cree Inc
Type
HEMTr
Datasheet

Specifications of CGH40180PP-TB

Mfg Application Notes
Thermal Performance Guide
Frequency
2.5GHz
For Use With/related Products
CGH40180
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
CGH40180PP
180 W, RF Power GaN HEMT
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40180PP, operating
from a 28 volt rail, offers a general purpose, broadband solution to
a variety of RF and microwave applications. GaN HEMTs offer high
efficiency, high gain and wide bandwidth capabilities making the
CGH40180PP ideal for linear and compressed amplifier circuits.
The transistor is available in a 4-lead flange package.
Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
220 W typical P
70 % Efficiency at P
28 V Operation
SAT
SAT
Subject to change without notice.
www.cree.com/wireless
APPLICATIONS
2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
1

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CGH40180PP-TB Summary of contents

Page 1

... CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits ...

Page 2

... Drain Efficiency 6 Output Mismatch Stress VSWR Dynamic Characteristics 7 Input Capacitance C Output Capacitance C Feedback Capacitance C Notes: Measured on wafer prior to packaging. 1 Scaled from PCM data. 2 Measured in CGH40180PP-TB, including all coupler losses 2 biasing each device at 1 defined as 2.8 mA. 5 SAT G Drain Efficiency = OUT DC Capacitance values are for each side of the device. ...

Page 3

... 800 900 Output Power and Drain Efficiency vs Frequency of the CGH40180PP measured in Broadband Amplifier Circuit CGH40180PP-TB 250 235 220 205 190 175 160 145 130 115 100 1100 Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 4

... Typical Performance Gain and Drain Efficiency vs Output Power of the CGH40180PP in Broadband Amplifier Circuit CGH40180PP-TB 22 gain 1100 20 eff 1100 18 Gain Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. ...

Page 5

... Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40180PP Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40180PP Electrostatic Discharge (ESD) Classifications Parameter Human Body Model Charge Device Model Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 6

... Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). CGH40180PP Transient Power Dissipation De-rating Curve CGH40180PP Transient Power Dissipation De-Rating Curve 250 200 150 100 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle with no power dissipated during the “ ...

Page 7

... Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40180PP Rev 1.1 Preliminary 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1 ...

Page 8

... CGH40180PP-TB Demonstration CGH40180PP-TB Demonstration Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40180PP Rev 1.1 Preliminary Schematic Amplifier Circuit Outline Amplifier Circuit Cree, Inc. ...

Page 9

... C74,C84 L10,L20 L30,L40 J1,J2 J3, CGH40180PP-TB Demonstration Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGH40180PP Rev 1.1 Preliminary Bill of Materials Amplifier Circuit Description ...

Page 10

... Typical Package S-Parameters for CGH40180PP, Single Side (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.957 -177.48 600 MHz 0.957 -178.74 700 MHz 0.957 -179.78 800 MHz 0.957 179.32 900 MHz 0.957 178.51 1.0 GHz 0.957 177.76 1.1 GHz 0.957 177 ...

Page 11

... Product Dimensions CGH40180PP (Package Type — 440199) Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40180PP Rev 1.1 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

Page 12

... Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40180PP Rev 1.1 Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1 ...

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