CGH40180PP-TB Cree Inc, CGH40180PP-TB Datasheet - Page 2

• Manufacturer Part Number: CGH40180PP-TB
• Description: BOARD DEMO AMP CIRCUIT CGH40180
• Manufacturer: Cree Inc
• Type: HEMTr

Specifications of CGH40180PP-TB

• Mfg Application Notes: Thermal Performance Guide
• Frequency: 2.5GHz
• For Use With/related Products: CGH40180
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
2
3
Electrical Characteristics (T
Notes:
1
2
3
4
5
6
7
Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics
Small Signal Gain
Power Output at Saturation
Drain Efficiency
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Refer to the Application Note on soldering at
CGH40180PP at P
See also, the Power Dissipation De-rating Curve on Page 6.
Measured on wafer prior to packaging.
Scaled from PCM data.
I
P
Drain Efficiency = P
Capacitance values are for each side of the device.
Measured in CGH40180PP-TB, including all coupler losses.
DQ
SAT
of 2.0 A is by biasing each device at 1.0 A.
is defined as: Q1 or Q2 = I
CGH40180PP Rev 1.1 Preliminary
6
3,4
1
1
(T
DISS
2
C
OUT
= 25
7
5
= 224 W.
2,3
/ P
˚
C, F
DC
2
0
= 1.3 GHz unless otherwise noted)
G
Symbol
VSWR
V
V
= 2.8 mA.
P
V
G
C
C
C
GS(th)
GS(Q)
I
DS
SAT
η
GD
BR
SS
GS
DS
C
= 25˚C)
Symbol
Min.
46.4
17.5
-3.8
120
180
50
www.cree.com/products/wireless_appnotes.asp
–
–
–
–
–
I
V
T
R
V
GMAX
T
T
T
DSS
STG
τ
θJC
GS
S
C
J
Typ.
56.0
35.7
-3.3
-3.0
220
9.6
1.6
19
65
–
–
10 : 1
Max.
-2.3
–
–
–
–
–
–
–
–
–
-65, +150
-40, +150
-10, +2
Rating
225
245
0.9
84
60
80
Units
V
V
V
dB
%
pF
pF
pF
W
Y
A
DC
DC
DC
Conditions
V
V
V
V
V
V
V
No damage at all phase angles,
V
P
V
V
V
OUT
DS
DS
DS
GS
DD
DD
DD
DD
DS
DS
DS
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
= 180 W CW
D
D
D
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 57.6 mA
= 57.6 mA
= 2.0 A
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 2.0 A
= 2.0 A
= 2.0 A, P
= 2.0 A,
= 2.0 V
USA Tel: [phone]
Units
˚C/W
Volts
Volts
in-oz
mA
www.cree.com/wireless
˚C
˚C
˚C
˚C
Fax: [phone].CREE
Fax: [phone]
Durham, NC 27703
OUT
4600 Silicon Drive
= P
SAT
Cree, Inc.