TDK5110F Infineon Technologies, TDK5110F Datasheet - Page 26

• Manufacturer Part Number: TDK5110F
• Description: TRANSMITTER ASK/FSK SGL TSSOP10
• Manufacturer: Infineon Technologies
• Type: Transmitterr

Specifications of TDK5110F

• Package / Case: 10-TSSOP
• Frequency: 434MHz Center
• Applications: Alarm Systems, Communication Systems
• Modulation Or Protocol: ASK, FSK
• Data Rate - Maximum: 20 kbps
• Power - Output: 11dBm
• Current - Transmitting: 14.2mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Voltage - Supply: 2.1 V ~ 4 V
• Operating Temperature: -40°C ~ 125°C
• Operating Frequency: 870 MHz
• Operating Supply Voltage: 2.5 V, 3.3 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Memory Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000056180; TDK5110FXT

The power efficiency (and the bandwidth) increase when operating at a slightly higher
R
and
In practice the RF-saturation voltage of the PA transistor and other parasitics reduce the
“critical” R
The output power P
R
The collector efficiency E is defined as
The diagram of Figure 14 was measured directly at the PA-output at V
the matching circuitry decrease the output power by about 1.5 dB. As can be seen from
the diagram, 250 Ω is the optimum impedance for operation at 3 V. For an approximation
of R
Figure 14
The DC collector current I
the load resistor R
collector current will show a characteristic dip at the resonance frequency for this type of
“overcritical” operation. The depth of this dip will increase with higher values of R
Data Sheet
L
L
, as shown in Figure 14.
> R
OPT
LC
and P
.
LC
.
OUT
Output power P
at other supply voltages those two formulas can be used:
L
. This is typical for overcritical operation of class C amplifiers. The
o
18
16
14
12
10
8
6
4
2
0
is reduced by operating in an “overcritical” mode characterised by
0
c
of the power amplifier and the RF output power P
100
o
(mW) and collector efficiency E vs. load resistor R
200
P
RL [Ohm]
E =
R
OUT
OPT
26
V
~
300
P
~
S
O
R
I
V
C
OPT
S
400
500
Pout [mW]
10*Ec
S
V 1.1, 2006-07-10
= 3 V. Losses in
Applications
TDK5110F
o
vary with
L
L
.
.