APT150GN60JDQ4 Microsemi Power Products Group, APT150GN60JDQ4 Datasheet - Page 5

• Manufacturer Part Number: APT150GN60JDQ4
• Description: IGBT 600V 220A 536W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT150GN60JDQ4

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 50µA
• Input Capacitance (cies) @ Vce: 9.2nF @ 25V
• Power - Max: 536W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT150GN60JDQ4MI; APT150GN60JDQ4MI

TYPICAL PERFORMANCE CURVES
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20,000
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.30
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp. (°C)
V
50
10
CE
0
10
0
(watts)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.0964
0.184
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
res
0.00770
0.300
SINGLE PULSE
50
10
-3
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
30
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 1.0Ω
500
400
300
200
100
50
= 400V
Figure 18,Minimim Switching Safe Operating Area
-2
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
70
CE
100
, COLLECTOR TO EMITTER VOLTAGE
90
200
110 130 150 170 190
Note:
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
-1
400
t 1
t 2
500
APT150GN60JDQ4
t 1
/
t 2
600
F
f
f
P
max1
max2
max
diss
1.0
700
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f