APT150GN60JDQ4 Microsemi Power Products Group, APT150GN60JDQ4 Datasheet - Page 9

IGBT 600V 220A 536W SOT227

APT150GN60JDQ4

Manufacturer Part Number
APT150GN60JDQ4
Description
IGBT 600V 220A 536W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT150GN60JDQ4

Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 150A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
9.2nF @ 25V
Power - Max
536W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT150GN60JDQ4MI
APT150GN60JDQ4MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT150GN60JDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT150GN60JDQ4
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT150GN60JDQ4
Quantity:
107
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
TYPICAL PERFORMANCE CURVES
1
4
5
2
3
r = 4.0 (.157)
(2 places)
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
®
F
RRM
is a Registered Trademark of SGS Thomson.
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
7.8 (.307)
8.2 (.322)
RRM
SOT-227 (ISOTOP
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Dimensions in Millimeters and (Inches)
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
and t rr .
di
* Emitter/Anode
* Emitter/Anode
F
3.3 (.129)
3.6 (.143)
/dt Adjust
Figure 32. Diode Test Circuit
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
4.0 (.157)
4.2 (.165)
(2 places)
®
(4 places)
) Package Outline
30µH
Zero
V r
APT60M75L2LL
1
1.95 (.077)
2.14 (.084)
TRANSFORMER
PEARSON 2878
CURRENT
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
2
0.75 (.030)
0.85 (.033)
D.U.T.
Collector/Cathode
Gate
Hex Nut M4
*
(4 places)
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
3
12.6 (.496)
12.8 (.504)
4
5
APT150GN60JDQ4
t rr / Q rr
Waveform
25.2 (0.992)
25.4 (1.000)
0.25 I RRM

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