APT100GT120JRDL Microsemi Power Products Group, APT100GT120JRDL Datasheet - Page 8

• Manufacturer Part Number: APT100GT120JRDL
• Description: IGBT 1200V 123A 570W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GT120JRDL

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 123A
• Current - Collector Cutoff (max): 300µA
• Input Capacitance (cies) @ Vce: 6.7nF @ 25V
• Power - Max: 570W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GT120JRDLMI; APT100GT120JRDLMI

Typical Perfromance Curves
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
1800
1600
1400
1200
1000
600
500
400
300
200
100
Figure 8. Junction Capacitance vs. Reverse Voltage
200
180
160
140
120
100
800
600
400
200
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
1
0
0
-di
T
V
V
J
F
R
T
T
F
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
= 800V
J
t
J
, ANODE-TO-CATHODE VOLTAGE (V)
rr
, JUNCTION TEMPERATURE (°C)
= 175°C
200
25
150A
0.5
V
R
, REVERSE VOLTAGE (V)
T
J
400
I
50
= 125°C
RRM
1
10
600
75
Q
rr
1.5
37.5A
100
800
T
J
= -55°C
T
t
rr
J
1000
2
125
= 25°C
Q
100 200
rr
75A
1200
150
2.5
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
180
160
140
120
100
140
120
100
80
60
40
20
30
25
20
15
10
80
60
40
20
0
5
0
0
25
0
-di
0
-di
T
V
J
F
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75A
75
150A
600
100
600
150A
APT100GT120JRDL(G)
75A
800
125
800
Duty cycle = 0.5
T
1000
T
1000
J
V
37.5A
150
J
R
= 175°C
37.5A
= 125°C
= 800V
1200
1200
175