APTM100H18FG Microsemi Power Products Group, APTM100H18FG Datasheet
APTM100H18FG
Specifications of APTM100H18FG
Related parts for APTM100H18FG
APTM100H18FG Summary of contents
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... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100H18FG V = 1000V DSS R = 180mΩ typ @ Tj = 25°C DSon I = 43A @ Tc = 25°C D Application • ...
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... 43A 125° 670V 25°C di /dt = 200A/µ 125°C j ≤ V ≤ 150° DSS j www.microsemi.com APTM100H18FG Min Typ Max Unit 200 = 25°C µA 1000 = 125°C 180 210 mΩ ±150 nA Min Typ Max Unit 10.4 nF 1.76 0.32 372 ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100H18FG To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.16 °C/W 2500 V ...
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... Pulse Duration (Seconds) 160 V 7V 140 250µs pulse test @ < 0.5 duty cycle 120 6.5V 100 5. Drain Current vs Case Temperature =20V 100 120 25 www.microsemi.com APTM100H18FG 0 Transfert Characteristics > I (on)xR (on)MAX =25° =125°C T =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM100H18FG ON resistance vs Temperature 2.5 V =10V GS I =21.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area ...
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... Switching Energy vs Gate Resistance L=100µH E off Source to Drain Diode Forward Voltage 1000 100 10 1 0.2 0.4 0.6 0 www.microsemi.com APTM100H18FG Rise and Fall times vs Current =670V t =2.5Ω f =125° Drain Current ( =670V off =43A =125° off Gate Resistance (Ohms) T =150° =25° ...