APTM100H18FG Microsemi Power Products Group, APTM100H18FG Datasheet - Page 4

• Manufacturer Part Number: APTM100H18FG
• Description: MOSFET MOD FULL BRIDGE 1000V SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100H18FG

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 372nC @ 10V
• Input Capacitance (ciss) @ Vds: 10400pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1.4
1.3
1.2
1.1
0.9
0.8
120
100
0.1
80
60
40
20
1
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
GS
V
0.05
=10V @ 21.5A
0.5
0.3
0.1
0.9
0.7
DS
20
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
, Drain to Source Voltage (V)
R
DS(on)
V
I
GS
D
, Drain Current (A)
40
=15, 10&8V
10
vs Drain Current
0.0001
60
15
V
GS
V
GS
=10V
=20V
80
20
100
0.001
rectangular Pulse Duration (Seconds)
25
7V
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5.5V
6.5V
6V
5V
120
30
Single Pulse
0.01
45
40
35
30
25
20
15
10
160
140
120
100
5
0
80
60
40
20
0
25
DC Drain Current vs Case Temperature
0
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
1
> I
APTM100H18FG
GS
T
50
Transfert Characteristics
D
C
(on)xR
T
, Gate to Source Voltage (V)
, Case Temperature (°C)
2
J
=125°C
T
DS
J
=25°C
3
(on)MAX
75
4
1
100
5
T
6
J
=-55°C
125
7
8
10
150
9
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