APT10026JLL Microsemi Power Products Group, APT10026JLL Datasheet

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APT10026JLL

Manufacturer Part Number
APT10026JLL
Description
MOSFET N-CH 1000V 30A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT10026JLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
267nC @ 10V
Input Capacitance (ciss) @ Vds
7114pF @ 25V
Power - Max
595W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT10026JLL
Manufacturer:
APT
Quantity:
15 500
STATIC ELECTRICAL CHARACTERISTICS
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
Symbol
T
R
BV
V
V
V
J
I
V
E
E
DS(on)
I
GS(th)
,T
I
DSS
GSS
P
I
GSM
DSS
DM
T
AR
I
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
C
APT Website - http://www.advancedpower.com
= V
= 25°C
1
C
= 25°C
4
GS
GS
DS
, I
2
DS
®
= ±30V, V
GS
D
= 800V, V
by significantly lowering R
= 1000V, V
(V
= 5mA)
R
= 0V, I
GS
MOSFET
= 10V, 15A)
D
DS
= 250µA)
GS
= 0V)
GS
= 0V, T
= 0V)
All Ratings: T
C
= 125°C)
DS(ON)
1000V 30A 0.260
C
APT10026JLL
= 25°C unless otherwise specified.
1000
MIN
3
APT10026JLL
-55 to 150
1000
3200
4.76
TYP
±30
±40
120
595
300
30
30
50
ISOTOP
0.260
±100
MAX
100
500
®
5
G
"UL Recognized"
Ohms
Amps
Amps
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
D
S

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APT10026JLL Summary of contents

Page 1

... ±30V 0V 5mA APT Website - http://www.advancedpower.com APT10026JLL 1000V 30A 0.260 DS(ON) "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT10026JLL UNIT 1000 Volts 30 Amps 120 ±30 Volts ±40 595 Watts 4.76 W/°C -55 to 150 300 Amps 30 50 3200 MIN TYP MAX ...

Page 2

... G 2014 = 15V 971 G MIN TYP 1182 31.9 MIN TYP MAX = +25° 7.11mH Peak 30A 700A/µs 1000V Note Duty Factor Peak 1.0 APT10026JLL UNIT µ J MAX UNIT 30 Amps 120 1.3 Volts ns µC V/ns 10 UNIT 0.21 °C 30A L ° 150 ...

Page 3

... FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 125 150 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT10026JLL 7.5V 15 &10V 7V 6. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ I = 15A =10V ...

Page 4

... FIGURE 15, RISE AND FALL TIMES vs CURRENT 10000 V = 667V 38A 125°C 8000 100µH E includes ON diode reverse recovery. 6000 4000 2000 FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT10026JLL C iss C oss C rss =+150° =+25°C 0.7 0.9 1.1 1 off GATE RESISTANCE (Ohms) ...

Page 5

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT10026JLL t d(off) 90 10% Switching Energy 0 Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12 ...

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