APT10026JLL Microsemi Power Products Group, APT10026JLL Datasheet - Page 3

• Manufacturer Part Number: APT10026JLL
• Description: MOSFET N-CH 1000V 30A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT10026JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 267nC @ 10V
• Input Capacitance (ciss) @ Vds: 7114pF @ 25V
• Power - Max: 595W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
30
25
20
15
10
0
5
0
-50
25
Junction
temp. (°C)
0
V DS > I D (ON) x R DS(ON) MAX.
V
V
FIGURE 4, TRANSFER CHARACTERISTICS
GS
I
GS
D
FIGURE 8, R
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
(watts)
= 15A
Power
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
= 10V
T
J
T
, JUNCTION TEMPERATURE (°C)
50
C
T J = +125°C
, CASE TEMPERATURE (°C)
2
0
DS(ON)
25
3
T J = +25°C
75
50
RC MODEL
4
T J = -55°C
vs. TEMPERATURE
100
0.0492
0.142
0.0189
75
5
100 125 150
6
125
7
150
8
0.0273F
0.469F
44.2F
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
90
80
70
60
50
40
30
20
10
0
-50
-50
0
0
V
DS
V
FIGURE 5, R
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10
-25
-25
NORMALIZED TO
T
I
= 10V @ I
5
J
D
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
20
, CASE TEMPERATURE (°C)
0
0
V GS =20V
10
DS(ON)
D
30
25
25
= 15A
V GS =10V
15 &10V
15
40
50
vs DRAIN CURRENT
50
50
75
75
20
100 125 150
100 125 150
60
7V
6.5V
25
7.5V
70
6V
5.5V
5V
APT10026JLL
30
80